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Вопрос 284

How does DC input impedance at the gate of a field-effect transistor (FET) compare with that of a bipolar transistor?

  1. They are both low impedance
  2. An FET has lower input impedance
  3. An FET has higher input impedanceПравильный ответ
  4. They are both high impedance

Объяснение

A bipolar transistor is driven through a forward-biased base-emitter junction, so its input continuously draws base current and presents a comparatively low DC impedance. An FET gate is separated from the channel by a reverse-biased junction or an insulating oxide and draws essentially no DC current, so its DC input impedance is orders of magnitude higher.

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Вопрос 284: How does DC input impedance at the gate of a field-effect… · FCC Amateur Extra Class (Element 4) · Questena